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this is information on a product in full production. september 2013 docid17079 rev 2 1/18 stf19nm50n, stp19nm50n, STW19NM50N n-channel 500 v, 0.2 typ., 14 a mdmesh? ii power mosfets in to-220fp, to-220 and to-247 packages datasheet - production data figure 1. internal schematic diagram features ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance applications ? switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. to-247 1 2 3 to-220 1 2 3 to-220fp 1 2 3 tab $0y '7$% * 6 order codes v ds @ t jmax r ds(on) max i d stf19nm50n 550 v 0.25 14 a stp19nm50n STW19NM50N table 1. device summary order codes marking packages packaging stf19nm50n 19nm50n to-220fp tube stp19nm50n to-220 STW19NM50N to-247 www.st.com
contents stf19nm50n, stp19nm50n, STW19NM50N 2/18 docid17079 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid17079 rev 2 3/18 stf19nm50n, stp19nm50n, STW19NM50N electrical ratings 18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-247 to-220fp v ds drain-source voltage 500 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 14 14 (1) 1. limited by maximum junction temperature a i d drain current (continuous) at t c = 100 c 10 10 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 56 56 (1) a p tot total dissipation at t c = 25 c 110 30 w dv/dt (3) 3. i sd 14 a, di/dt 400 a/s, v ds peak v (br)dss , v dd = 80% v (br)dss . peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220 to-247 to-220fp r thj-case thermal resistance junction-case max 1.14 4.17 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 6a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) 208 mj
electrical characteristics stf19nm50n, stp19nm50n, STW19NM50N 4/18 docid17079 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = 500 v v ds = 500 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 7 a 0.2 0.25 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1000 - pf c oss output capacitance - 72 - pf c rss reverse transfer capacitance -3-pf c oss eq (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v ds = 0 to 400 v, v gs = 0 - 202 - pf r g intrinsic gate resistance f = 1 mhz, i d =0 - 4.4 - q g total gate charge v dd = 400 v, i d = 14 a, v gs = 10 v (see figure 17 ) -34-nc q gs gate-source charge - 5 - nc q gd gate-drain charge - 18 - nc table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 250 v, i d = 7 a, r g = 4.7 , v gs = 10 v (see figure 18 ) -12-ns t r rise time - 16 - ns t d(off) turn-off-delay time - 61 - ns t f fall time - 17 - ns
docid17079 rev 2 5/18 stf19nm50n, stp19nm50n, STW19NM50N electrical characteristics 18 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 14 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 56 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 14 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 14 a, di/dt = 100 a/s v dd = 60 v (see figure 21 ) - 296 ns q rr reverse recovery charge - 3.5 c i rrm reverse recovery current - 23 a t rr reverse recovery time i sd = 14 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 21 ) - 346 ns q rr reverse recovery charge - 4 c i rrm reverse recovery current - 24 a
electrical characteristics stf19nm50n, stp19nm50n, STW19NM50N 6/18 docid17079 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp figure 3. thermal impedance for to-220fp figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v ?v pv pv 7m ?& 7f ?& 6lqjoh sxovh $0y , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v ?v pv pv 7m ?& 7f ?& 6lqjoh sxovh $0y , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v ?v pv pv 7m ?& 7f ?& 6lqjoh sxovh $0y
docid17079 rev 2 7/18 stf19nm50n, stp19nm50n, STW19NM50N electrical characteristics 18 figure 8. output characteristics figure 9. transfer characteristics figure 10. normalized v ds vs temperature figure 11. static drain-source on resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations , ' 9 '6 9 $ 9 9 9 *6 9 9 $0y , ' 9 *6 9 $ 9 '6 9 $0y v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 i d =1ma 1.08 1.10 am09028v1 5 '6rq , ' $ 2kp 9 *6 9 $0y 9 *6 4 j q& 9 9 '' 9 , ' $ 9 '6 9 '6 9 $0y & 9 '6 9 s) &lvv &rvv &uvv $0y
electrical characteristics stf19nm50n, stp19nm50n, STW19NM50N 8/18 docid17079 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature 9 *6wk 7 - ?& qrup $0y , ' ?$ 5 '6rq 7 - ?& qrup , ' $ 9 '6 9 $0y
docid17079 rev 2 9/18 stf19nm50n, stp19nm50n, STW19NM50N test circuits 18 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stf19nm50n, stp19nm50n, STW19NM50N 10/18 docid17079 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid17079 rev 2 11/18 stf19nm50n, stp19nm50n, STW19NM50N package mechanical data 18 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stf19nm50n, stp19nm50n, STW19NM50N 12/18 docid17079 rev 2 figure 22. to-220fp drawing 7012510_rev_k_b
docid17079 rev 2 13/18 stf19nm50n, stp19nm50n, STW19NM50N package mechanical data 18 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stf19nm50n, stp19nm50n, STW19NM50N 14/18 docid17079 rev 2 figure 23. to-220 type a drawing bw\sh$b5hyb7
docid17079 rev 2 15/18 stf19nm50n, stp19nm50n, STW19NM50N package mechanical data 18 table 11. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data stf19nm50n, stp19nm50n, STW19NM50N 16/18 docid17079 rev 2 figure 24. to-247 drawing 0075325_g
docid17079 rev 2 17/18 stf19nm50n, stp19nm50n, STW19NM50N revision history 18 5 revision history table 12. document revision history date revision changes 09-feb-2010 1 first release 03-sep-2013 2 ? updated: section 2.1: electrical characteristics (curves) ? updated: section 4: package mechanical data ? minor text changes.
stf19nm50n, stp19nm50n, STW19NM50N 18/18 docid17079 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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